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GL510

Mica wafers in combination with insulating bushes facilitate the isolated mounting of semiconductors to heatsinks and other components. To avoid pockets of air bubbles, the use of...

For device: TO 3
Minimum thermal resistance 0,3 K/W
Device mounted by: Screw On
Material Glimmer
Temperature resistance 550 °C
Electrical insulating 2,5 kV

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GL530

Mica wafers in combination with insulating bushes facilitate the isolated mounting of semiconductors to heatsinks and other components. To avoid pockets of air bubbles, the use of...

For device: TO 220
Minimum thermal resistance 1,2 K/W
Thickness [mm] 0,05
Device mounted by: Screw On
Temperature resistance 550 °C
Electrical insulating 2,5 kV

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GL535/N

Mica wafers in combination with insulating bushes facilitate the isolated mounting of semiconductors to heatsinks and other components. To avoid pockets of air bubbles, the use of...

For device: TO 218|TOP 3
Minimum thermal resistance 0,8 K/W
Thickness [mm] 0,05
Device mounted by: Screw On
Material Glimmer
Electrical insulating 2,5 kV

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AO471

Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the...

For device: TO 218|TOP 3
Dielectriccoefficient 9,1 bei 1 MHz
Minimum thermal resistance 0,5 K/W
Thickness [mm] 1,5
Device mounted by: Screw On
Material Aluminiumoxid
Electrical insulating 10 kV

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AO472

Insulation wafer - aluminium oxide facilitate insulated mounting of semicontuctors within high voltage ranges. In spite of high dielectric strength, a good heat conductivity is given.

For device: TO 218|TOP 3
Dielectriccoefficient 9,1 at 1MHz
Minimum thermal resistance 0,5 K/W
Thickness [mm] 1,6
Device mounted by: Screw On
Material Aluminiumoxid
Electrical insulating 10 kV

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AO475

Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the...

For device: TO 220
Dielectriccoefficient 9,1 at 1MHz
Thickness [mm] 1,6
Device mounted by: Screw On
Material Aluminiumoxid
Electrical insulating 10 kV

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AO479

Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the...

For device: TO 220
Dielectriccoefficient 9,1 at 1MHz
Minimum thermal resistance 0,5 K/W
Thickness [mm] 1,5
Device mounted by: Screw On
Material Aluminiumoxid
Electrical insulating 15 kV

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AO480

Aluminium-oxide -wafers facilitate insulated mounting of semiconductors within high voltage ranges. In spit of high dielectric strength, a good heat conductivity i.e. from the...

For device: TO 218|TOP 3
Dielectriccoefficient 9,1 at 1MHz
Minimum thermal resistance 0,5 K/W
Thickness [mm] 3
Device mounted by: Screw On
Material Aluminiumoxid
Electrical insulating 30 kV

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IS560

Insulating bush in combination with insulating wafers from mica or silicone foil facilitate insulated mounting of semiconductors to heat sinks or other components

Inner diameter 3,1
Outer diameter 3,5
Diameter [mm] 6
For device: TO220|TO218 (TOP3)|Multiwatt
Thickness [mm] 0,2
Device mounted by: Screw On
Material Makrolone
Temperature resistance 130 °C
Electrical insulating 30 kV

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IS561

Insulating bushes in combination with insulating wafers from mica or silicone foil facilitate insulated mounting of semiconductors to heatsinks an other components. Combustibility:...

Inner diameter 3,1
Outer diameter 3,5
Diameter [mm] 6
For device: TO220|TO218 (TOP3)|Multiwatt
Thickness [mm] 0,2
Device mounted by: Screw On
Material SR25
Temperature resistance 200 °C
Electrical insulating 16 kV

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IS565

Insulating bush in combination with insulating wafers from mica or silicone foil facilitate insulated mounting of semiconductors to heat sinks or other components

Inner diameter 3,1
Outer diameter 3,8
Diameter [mm] 6,4
For device: TO220|TO218 (TOP3)|Multiwatt
Thickness [mm] 0,35
Device mounted by: Screw On
Material Makrolone
Temperature resistance 130 °C
Electrical insulating 30 kV

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IS570

Insulating bush in combination with insulating wafers from mica or silicone foil facilitate insulated mounting of semiconductors to heat sinks or other components

Inner diameter 3,1
Outer diameter 3,8
Diameter [mm] 7,1
For device: TO220|TO218 (TOP3)|Multiwatt
Thickness [mm] 0,35
Device mounted by: Screw On
Material Makrolone
Temperature resistance 130 °C
Electrical insulating 30 kV

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